https://scholars.lib.ntu.edu.tw/handle/123456789/325279
標題: | Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes | 作者: | A. Krier M. Stone Q. D. Zhuang P. W. Liu G. Tsai HAO-HSIUNG LIN |
公開日期: | 八月-2006 | 卷: | 89 | 期: | 9 | 起(迄)頁: | 091110 | 來源出版物: | Applied Physics Letters | 摘要: | Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 μm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 μm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output. © 2006 American Institute of Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748267676&doi=10.1063%2f1.2339036&partnerID=40&md5=de42ae2c24a9b5c03888d4e757837c70 | DOI: | 10.1063/1.2339036 | SDG/關鍵字: | Deposition; Epitaxial growth; Indium compounds; Light emitting diodes; Semiconductor quantum wells; Confined holes; Injection current; Surface exposure; Electroluminescence |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。