https://scholars.lib.ntu.edu.tw/handle/123456789/32829
標題: | Strain relaxation and quantum confinement in InGaN/GaN nanoposts | 作者: | Chen, Horng-Shyang Yeh, Dong-Ming Lu, Yen-Cheng Chen, Cheng-Yen Huang, Chi-Feng Tang, Tsung-Yi Yang, C.C. Wu, Cen-Shawn Chen, Chii-Dong |
公開日期: | 2006 | 出版社: | Taipei:National Taiwan University Dept Phys | 起(迄)頁: | - | 來源出版物: | Nanotechnology 17, 1454–1458 | 摘要: | Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography & inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL & time-resolved PL measurements & a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement & strain relaxation. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2006111501211846 | 其他識別: | 246246/2006111501211846 |
顯示於: | 物理學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。