https://scholars.lib.ntu.edu.tw/handle/123456789/364345
Title: | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Authors: | Chang, WH Chiang, TH Wu, YD Hong, M Lin, CA Kwo, J MINGHWEI HONG |
Issue Date: | 2011 | Journal Volume: | 29 | Journal Issue: | 3 | Start page/Pages: | 03C122 | Source: | Journal of Vacuum Science & Technology B | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/364345 |
Appears in Collections: | 應用物理研究所 |
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