https://scholars.lib.ntu.edu.tw/handle/123456789/374102
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang-Yu Lin | en_US |
dc.contributor.author | Chih-Wei Chien | en_US |
dc.contributor.author | CHUNG-CHIH WU | en_US |
dc.contributor.author | Yung-Hui Yeh | en_US |
dc.contributor.author | Chun-Cheng Cheng | en_US |
dc.contributor.author | Chih-Ming Lai | en_US |
dc.contributor.author | Ming-Jiue Yu | en_US |
dc.contributor.author | Chyi-Ming Leu | en_US |
dc.contributor.author | Tzong-Ming Lee | en_US |
dc.creator | Chang-Yu Lin;Chih-Wei Chien;Chung-Chih Wu;Yung-Hui Yeh;Chun-Cheng Cheng;Chih-Ming Lai;Ming-Jiue Yu;Chyi-Ming Leu;Tzong-Ming Lee | - |
dc.date.accessioned | 2018-09-10T09:25:02Z | - |
dc.date.available | 2018-09-10T09:25:02Z | - |
dc.date.issued | 2012-07 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/374102 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84862673991&doi=10.1109%2fTED.2012.2193585&partnerID=40&md5=5d61e940a9c73298364c93eaf28083fe | - |
dc.description.abstract | In this paper, we had successfully implemented flexible top-gate staggered amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on colorless and transparent polyimide (PI)-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The use of the selectively coated release layer between the nanocomposite PI film and the glass carrier ensured smooth debonding of the plastic substrate after TFT fabrication. The TFTs showed decent performances (with mobility > 10 cm 2/V·s) either as fabricated or as debonded from the carrier glass. By bending the devices to different radii of curvature (from a flat state to an outward bending radius of 5 mm), influences of mechanical strains on the characteristics of flexible a-IGZO TFTs were also investigated. In general, the mobility of the flexible a-IGZO TFT increased with the tensile strain, whereas the threshold voltage decreased with the tensile strain. The variation of the mobility in a-IGZO TFTs versus the strain appeared smaller than those observed for amorphous silicon TFTs. © 2012 IEEE. | - |
dc.language | en | en |
dc.relation.ispartof | IEEE Transactions on Electron Devices | en_US |
dc.source | AH-anncc | - |
dc.subject | In-Ga-Zn-O; mechanical strain; nanocomposite; polyimide (PI); thin-film transistors (TFTs) | - |
dc.subject.other | Bending radius; Etching process; Glass carrier; In-ga-zn-o; Mass fabrication; Mechanical strain; PI film; Plastic substrates; Radii of curvature; Release layer; Thin-film transistor (TFTs); Transparent polyimides; Carrier mobility; Fabrication; Gallium; Glass; Nanocomposite films; Nanocomposites; Polyimides; Strain; Substrates; Thin film transistors; Zinc; Gallium alloys | - |
dc.title | Effects of Mechanical Strains on Characteristics of Top-gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/TED.2012.2193585 | - |
dc.identifier.scopus | 2-s2.0-84862673991 | - |
dc.identifier.isi | WOS:000305622800020 | - |
dc.relation.pages | 1956-1962 | - |
dc.relation.journalvolume | 59 | - |
dc.relation.journalissue | 7 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Office of Research and Development | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Administrative Unit | - |
顯示於: | 電機工程學系 |
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