https://scholars.lib.ntu.edu.tw/handle/123456789/391183
標題: | Non-uniform hole current induced negative capacitance phenomenon examined by photo-illumination in MOS(n) | 作者: | JENN-GWO HWU | 公開日期: | 2015 | 卷: | 69 | 期: | 5 | 起(迄)頁: | 261-265 | 來源出版物: | ECS Transactions | 摘要: | The photo-induced negative capacitance (NC) phenomenon in MOS(n) is firstly observed and investigated by both experiments and simulations. The possible mechanism for NC phenomenon is proposed. It is shown that NC is resulted from non-uniform hole-electron recombination process due to lateral diffusion of photo-induced holes. The insufficiency of bulk holes for hole-electron recombination leads to voltage-current lag and NC behavior. © The Electrochemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946089301&doi=10.1149%2f06905.0261ecst&partnerID=40&md5=30637a0cbf4f1ef4987f4566f1bb1d8d http://scholars.lib.ntu.edu.tw/handle/123456789/391183 |
DOI: | 10.1149/06905.0261ecst | SDG/關鍵字: | Nanoelectronics; Hole current; Hole-electron recombination; Lateral diffusion; Negative capacitance; Non-uniform; Photo-induced; Possible mechanisms; Voltage current; Capacitance |
顯示於: | 電機工程學系 |
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