https://scholars.lib.ntu.edu.tw/handle/123456789/391184
標題: | Negative gate transconductance in MIS tunnel diode induced by peripheral minority carrier control mechanism | 作者: | JENN-GWO HWU | 公開日期: | 2015 | 卷: | 69 | 期: | 5 | 起(迄)頁: | 229-235 | 來源出版物: | ECS Transactions | 摘要: | Negative Gate Transconductance (NGT) in the tunneling current of a metal-insulator-semiconductor (MIS) tunnel diode gated by an MIS tunnel gate capacitor is demonstrated in this work. The mechanism is that the effective Schottky barrier height of the MIS tunnel diode can be modulated by controlling the substrate surface minority carriers concentration with the gate bias of the MIS tunnel gate capacitor. Since the tunneling current of a reverse biased MIS tunnel diode is exponentially dependent on the effective Schottky barrier height, the signal of the rise and fall of minority carriers concentration can be read out by the tunneling current and therefore an NGT behavior appears. © The Electrochemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946045328&doi=10.1149%2f06905.0229ecst&partnerID=40&md5=2a1686904b49f396f00752a0e70b206f http://scholars.lib.ntu.edu.tw/handle/123456789/391184 |
DOI: | 10.1149/06905.0229ecst | SDG/關鍵字: | Diodes; Electron tunneling; Metal insulator boundaries; MIS devices; Nanoelectronics; Schottky barrier diodes; Semiconductor metal boundaries; Transconductance; Tunnel diodes; Control mechanism; Gate capacitors; Metal-insulator-semiconductors; Minority carrier; Negative gate; Schottky barrier heights; Substrate surface; Tunneling current; Carrier concentration |
顯示於: | 電機工程學系 |
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