https://scholars.lib.ntu.edu.tw/handle/123456789/404494
標題: | The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy | 作者: | Hsieh, C.-F. Chen, C.-W. Chen, C.-H. Liao, M.-H. |
關鍵字: | Defect; Low energy hydrogen plasma cleaning process; Positron annihilation spectroscopy; Sige-based devices | 公開日期: | 2014 | 卷: | 4 | 期: | 1 | 起(迄)頁: | 323-327 | 來源出版物: | International Journal of Automation and Smart Technology | 摘要: | Positron Annihilation Spectra (PAS), Raman, and photoluminescence spectroscopy reveal that Sio.5Geo.5/Si interface quality can be dramatically improved through a low energy plasma cleaning process using hydrogen. In the PAS, the particularly small values of lifetime and intensity near the Sio.5Geo.5/Si interface in the treated sample indicate a 2.25 times reduction in defect concentration. Fewer defects were found in the interface, resulting in a high compressive strain of about 0.36 % in the top layer, which can be observed in Raman spectra, and a 1.39 times increase to the radiative recombination rate for the infrared emission, which can be observed in the photoluminescence spectra. Improved Sio.5Geo.5/Si interface quality leads to improved optical and electrical characteristics in SiGe-based devices in a broader range of photovoltaic applications. The PAS is also shown to be a useful metrology tool for quantifying defects in SiGe-based devices. © 2014 International Journal of Automation and Smart Technology. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/404494 | DOI: | 10.5875/ausmt.v4i1.234 |
顯示於: | 電機工程學系 |
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