https://scholars.lib.ntu.edu.tw/handle/123456789/404526
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | M. H.Liao | en_US |
dc.contributor.author | M. H. Lee | en_US |
dc.contributor.author | P.-G. Chen | en_US |
dc.contributor.author | S.-T. Fan | en_US |
dc.contributor.author | Y.-C. Chou | en_US |
dc.contributor.author | C.-Y. Kuo | en_US |
dc.contributor.author | C.-H. Tang | en_US |
dc.contributor.author | H.-H.Chen | en_US |
dc.contributor.author | S.-S. Gu | en_US |
dc.contributor.author | R.-C. Hong | en_US |
dc.contributor.author | Z.-Y. Wang | en_US |
dc.contributor.author | S.-Y. Chen | en_US |
dc.contributor.author | C.-Y. Liao | en_US |
dc.contributor.author | K.-T. Chen | en_US |
dc.contributor.author | S.T. Chang | en_US |
dc.contributor.author | K.-S. Li | en_US |
dc.contributor.author | C. W. Liu | en_US |
dc.creator | C. W. Liu;K.-S. Li;S.T. Chang;K.-T. Chen;C.-Y. Liao;S.-Y. Chen;Z.-Y. Wang;R.-C. Hong;S.-S. Gu;H.-H.Chen;C.-H. Tang;C.-Y. Kuo;Y.-C. Chou;S.-T. Fan;P.-G. Chen;M. H. Lee;M. H.Liao | - |
dc.date.accessioned | 2019-03-11T08:02:03Z | - |
dc.date.available | 2019-03-11T08:02:03Z | - |
dc.date.issued | 2017 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/404526 | - |
dc.description | San Francisco | - |
dc.relation.ispartof | International Electron Devices Meeting | - |
dc.title | Ferroelectric Al:HfO2 Negative Capacitance FETs | en_US |
dc.type | conference proceeding | en |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
item.openairetype | conference proceeding | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.orcid | 0000-0003-2942-4520 | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。