https://scholars.lib.ntu.edu.tw/handle/123456789/491611
Title: | Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate | Authors: | Das, A. Maikap, S. Li, W.-C. Chang, L.-B. Yang, J.-R. JER-REN YANG |
Issue Date: | 2009 | Journal Volume: | 48 | Journal Issue: | 5 PART 2 | Source: | Japanese Journal of Applied Physics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/491611 | DOI: | 10.1143/JJAP.48.05DF02 |
Appears in Collections: | 材料科學與工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.