https://scholars.lib.ntu.edu.tw/handle/123456789/498754
Title: | Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector | Authors: | Tang, S.-F. Lin, S.-Y. SI-CHEN LEE |
Issue Date: | 2001 | Journal Volume: | 78 | Journal Issue: | 17 | Start page/Pages: | 2428-2430 | Source: | Applied Physics Letters | Abstract: | A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (≥250 K) was demonstrated. The specific peak detectivity D* is 2.4×108 cm Hz1/2/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. © 2001 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498754 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035938375&doi=10.1063%2f1.1362201&partnerID=40&md5=555c0ed57e86910431b456d2fcba6dd5 |
ISSN: | 00036951 | DOI: | 10.1063/1.1362201 |
Appears in Collections: | 電機工程學系 |
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