https://scholars.lib.ntu.edu.tw/handle/123456789/498859
標題: | Uniform square polycrystalline silicon fabricated by employing periodic metallic pads and SiON absorption layer for thin film transistors | 作者: | Yang, P.-C. Hsueh, C.-Y. Yang, C.-H. Lee, J.-H. Lin, H.-W. Chang, H.-Y. Chang, C.-Y. SI-CHEN LEE |
關鍵字: | Polycrystalline silicon; Thin film transistor (TFT) | 公開日期: | 2008 | 卷: | 55 | 期: | 8 | 起(迄)頁: | 2212-2217 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | The polycrystalline silicon with regular square grains is fabricated by employing metallic (Cr/Al) periodic pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The maximum lateral growth length of the poly-Si is 1.78 μm by this method. If the metal pads are periodically arranged, the poly-Si can grow to regular square grains following the high power excimer laser annealing. After removing the metallic pads, the low power laser shot transfers the a-Si:H under the original metallic pads to poly-Si without destroying the square grains. The TFTs fabricated by this method achieve a field effect mobility of 450 cm2/V· s and an on/off current ratio exceeding 107. It is found that the TFT with smaller channel width and length results in a better subthreshold swing because it contains fewer grain boundaries and defects. © 2008 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498859 https://www.scopus.com/inward/record.uri?eid=2-s2.0-49249092518&doi=10.1109%2fTED.2008.925921&partnerID=40&md5=678ffeb142b2fbe43407d6ee14dcc7ab |
ISSN: | 00189383 | DOI: | 10.1109/TED.2008.925921 | SDG/關鍵字: | Absorption; Amorphous materials; Annealing; Excimer lasers; Gas lasers; Heat storage; Lasers; Metallic soaps; Metals; Nitrides; Nonmetals; Optical design; Polysilicon; Silicon carbide; Thick films; Thin film devices; Thin film transistors; Transistors; Absorption layers; Excimer-laser annealing; Field-effect mobilities; Heat absorption; High powers; Lateral growth; Low-power lasers; Metal pads; Metallic pads; Poly-Si; Polycrystalline silicon; Silicon Carbide devices; Silicon oxynitride; Thin film transistor (TFT); Silicon |
顯示於: | 電機工程學系 |
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