https://scholars.lib.ntu.edu.tw/handle/123456789/505929
Title: | Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (Fin-HEMTs) through narrowing fin structure's width | Authors: | Yang, S.-C. Dai, C.-J. Chang, L.-C. CHAO-HSIN WU |
Issue Date: | 2017 | Journal Volume: | 2017-January | Start page/Pages: | 1��2�� | Source: | EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/505929 | DOI: | 10.1109/EDSSC.2017.8126487 |
Appears in Collections: | 電機工程學系 |
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