https://scholars.lib.ntu.edu.tw/handle/123456789/606956
Title: | Analytical Modeling of Tunnel-Junction Transistor Lasers | Authors: | Tung C.-T Lin H.-Y Chang S.-W CHAO-HSIN WU |
Keywords: | Franz-Keldysh effect;Optical frequency response;Transistor laser;Tunnel-junction transistor laser;Economic and social effects;Modulation;Quantum well lasers;Semiconductor quantum wells;Transistors;Charge control model;Confinement factor;Direct tunneling;Doping concentration;Modulation bandwidth;Transistor lasers;Voltage modulations;Tunnel junctions | Issue Date: | 2022 | Journal Volume: | 28 | Journal Issue: | 1 | Source: | IEEE Journal of Selected Topics in Quantum Electronics | Abstract: | Compared with transistor lasers (TLs), tunnel-junction transistor lasers (TJTLs) are more easily modulated with the voltage across base-collector (BC) junction. In this work, the charge-control model and modified rate equation of TJTLs which includes the Franz-Keldysh effect and direct tunneling is developed. We conduct DC and AC analysis with our model and show that the doping concentration in the BC junction plays a key role in the capability to voltage modulate TJTLs since it affects the junction field. A trade-off between the optical power and capability of the voltage modulation emerges as a concern for designing the doping concentration. We also study the effect of the quantum well (QW) position. The result shows that the QW closer to the BC junction can obtain a higher confinement factor to achieve better output power and modulation bandwidth. ? 1995-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85111765243&doi=10.1109%2fJSTQE.2021.3090527&partnerID=40&md5=29ae1b842b6427e191023114ddf0c4a0 https://scholars.lib.ntu.edu.tw/handle/123456789/606956 |
ISSN: | 1077260X | DOI: | 10.1109/JSTQE.2021.3090527 |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.