https://scholars.lib.ntu.edu.tw/handle/123456789/607372
Title: | Analysis of Light-Emission Polarization Ratio in Deep-Ultraviolet Light-Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method | Authors: | Shen H.-T Chang Y.-C Wu Y.-R. YUH-RENN WU |
Keywords: | Aluminum;Aluminum alloys;Aluminum gallium nitride;Buffer layers;Gallium alloys;III-V semiconductors;Polarization;Semiconductor alloys;Semiconductor quantum wells;Al composition;Alloy fluctuation;Deep ultraviolet;K-p method;Lightemitting diode;Polarization ratios;Random alloy;Ultraviolet light emitting diodes;Ultraviolet light-emitting diodes;UVC light-emitting diode;Light emitting diodes | Issue Date: | 2022 | Journal Volume: | 16 | Journal Issue: | 2 | Source: | Physica Status Solidi - Rapid Research Letters | Abstract: | For nitride-based AlGaN light-emitting diodes, the fluctuations in the potential caused by alloy disorder can relax the compressive strain in the lower Al (higher Ga) composition sites. However, strain in the quantum wells impacts the bandgap and the transverse magnetic/transverse electric (TE) polarization ratio. Herein, the 6 × 6 k·p method combined with a 3D Poisson, drift diffusion, and localization landscape solver is used to study the changes in the polarization ratio due to random alloy fluctuations. The influence of different Al compositions in the buffer layer is studied. The results show that the TM polarization ratio with alloy fluctuations is higher than that without fluctuations. On increasing the Al composition in the buffer layer, the polarization ratio changes from 0.93 to ?0.67 when the Al composition changes from 60% to 100%. ? 2021 Wiley-VCH GmbH |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85119253392&doi=10.1002%2fpssr.202100498&partnerID=40&md5=5c89047fd4a233ad2986f645543d8ef7 https://scholars.lib.ntu.edu.tw/handle/123456789/607372 |
ISSN: | 18626254 | DOI: | 10.1002/pssr.202100498 |
Appears in Collections: | 電機工程學系 |
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