https://scholars.lib.ntu.edu.tw/handle/123456789/607378
Title: | Influences of Random Alloy Fluctuation to the Efficiency of μlED and Optimization of Efficiency with Vertical Type Contact | Authors: | Ho C.-H Wu Y.-R. YUH-RENN WU |
Keywords: | AlInGaP;InGaN;piezoelectric effect;random alloy fluctuation;sidewall effect;μLED;Aluminum alloys;Computer software;Efficiency;Gallium alloys;III-V semiconductors;Indium alloys;Light emitting diodes;MEMS;Nitrides;Semiconductor alloys;Alloy fluctuation;Chip sizes;LED efficiencies;Nitride based LED;Optimisations;Random alloy;Random alloy fluctuation;Sidewall effects;Vertical-type;ΜLED;Piezoelectricity | Issue Date: | 2021 | Journal Volume: | 2021-September | Start page/Pages: | 65-66 | Source: | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | Abstract: | μ-LED's efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of μ-LED will be proposed in the presentation. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85116328278&doi=10.1109%2fNUSOD52207.2021.9541503&partnerID=40&md5=4e2e865ac0ecf8b3f875a2d2e6134ecf https://scholars.lib.ntu.edu.tw/handle/123456789/607378 |
ISSN: | 21583234 | DOI: | 10.1109/NUSOD52207.2021.9541503 |
Appears in Collections: | 電機工程學系 |
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