https://scholars.lib.ntu.edu.tw/handle/123456789/632213
Title: | 6 Stacked Ge0.95Si0.05nGAAFETs without Parasitic Channels by Wet Etching | Authors: | Cheng C.-Y Hsieh W.-H Huang B.-W Liu Y.-C Tu C.-T Tsai C.-E Chueh S.-J Chen G.-H CHEE-WEE LIU |
Issue Date: | 2022 | Source: | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | Abstract: | The 6 stacked Ge0.95Si0.05 nanowires without parasitic channels are realized by NH4OH + H2O2 wet etching. High ION per stack and per footprint are achieved thanks to the nanowire conduction and the electrons populated in the high mobility L4 valleys. The reduced SS of 80 mV/dec and improved ION/IOFF of 1.5E5 are obtained by the removal of parasitic channels compared to the 7 stacked Ge0.95Si0.05 nanowires with the parasitic channels in our previous work. The high ION of 120 µA per stack (4600 µA/µm per channel footprint) at VOV = VDS = 0.5 V is reached among the Ge/GeSi 3D nFETs. © 2022 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130429580&doi=10.1109%2fVLSI-TSA54299.2022.9770969&partnerID=40&md5=ccd1d243b928cce939a68a43c0c95615 https://scholars.lib.ntu.edu.tw/handle/123456789/632213 |
DOI: | 10.1109/VLSI-TSA54299.2022.9770969 | SDG/Keyword: | Ammonium hydroxide; Ions; Silicon; Silicon compounds; Wet etching; High mobility; Parasitics; Nanowires |
Appears in Collections: | 電機工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.