https://scholars.lib.ntu.edu.tw/handle/123456789/636115
標題: | Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2P<inf>r</inf>= 84 μC/cm<sup>2</sup>and Endurance > 1E11 | 作者: | Zhao, Zefu Chen, Yu Rui Chen, Yun Wen Hsieh, Wan Hsuan Wang, Jer Fu Lee, Jia Yang Xing, Yifan Chen, Guan Hua CHEE-WEE LIU |
公開日期: | 1-一月-2023 | 卷: | 2023-June | 來源出版物: | Digest of Technical Papers - Symposium on VLSI Technology | 摘要: | Nearly epitaxially grown ferroelectric Hf0.5 Zr0.5 O2 (HZO) films on (001) n+-Si(3E19/cm 3) and n+ -Ge(3E20/cm 3) substrates exhibit record remanent polarization (2P r) of 84 and 73μC/cm2, respectively, which are higher than that on amorphous SiO2 (α-SiO2) and partially crystallized TiN underlayers. HZO films on n+ -Si and n+-Ge also show high coercive field (2Ec) of 8.8 and 5.8 MV/cm, respectively. Superlattice HZO films by plasma-enhanced atomic layer deposition (PEALD) show that c-axis is well-aligned with the growth direction in scanning transmission electron microscopy (STEM) images, consistent with observed high 2Pr of epitaxial HZO films on n+-Si(Ge). The density functional theory (DFT) indicates o-phase is greatly stabilized in the HZO films on n+- Si(Ge) substrates due to low interfacial energy at o-phase/Si(Ge) interfaces as compared to m-(t-)phase/Si(Ge). After 1E9 and 1E11 endurance cycles, the HZO on n+-Si and n+-Ge substrates have record finial 2P r of 51 and 47 μC/cm2, respectively. Our study demonstrates the way to achieve single crystalline ferroelectric HZO films by using small misfit substrates without interfacial layers. The thermal budget is as low as 450°C. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/636115 | ISBN: | 9784863488069 | ISSN: | 07431562 | DOI: | 10.23919/VLSITechnologyandCir57934.2023.10185233 |
顯示於: | 電機工程學系 |
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