公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well | CHEE-WEE LIU ; Melnikov, M.Yu.; Shashkin, A.A.; Dolgopolov, V.T.; Huang, S.-H.; Liu, C.W.; Kravchenko, S.V.; CHEE-WEE LIU | Applied Physics Letters | | | |
2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |
2010 | Ultralow-power complementary metal-oxide-semiconductor inverters constructed on schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors | CHEE-WEE LIU ; Ma, R.M.; Peng, R.M.; Wen, X.N.; Dai, L.; Liu, C.; Sun, T.; Xu, W.J.; Qin, G.G.; CHEE-WEE LIU | Journal of Nanoscience and Nanotechnology | | | |
2021 | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2021 | Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1?xZrxO2 diodes | Hsiang K.-Y; Liao C.-Y; Wang J.-F; Lou Z.-F; Lin C.-Y; Chiang S.-H; Liu C.-W; Hou T.-H; Lee M.-H.; CHEE-WEE LIU | Nanomaterials | | | |
2017 | Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells | Melnikov M.Y; Dolgopolov V.T; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2011 | Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors | CHEE-WEE LIU ; Lu, T.M.; Lee, C.-H.; Huang, S.-H.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | | | |
1998 | Valence band properties of relaxed Ge1-xCx alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
1998 | Valence band properties of relaxed Ge<inf>1-x</inf>C<inf>x</inf> alloys | Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
2021 | Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system | Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Physical Review B | | | |
2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2001 | Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures | MIIN-JANG CHEN ; CHING-FUH LIN ; Liu, W. T.; Chang, S. T.; CHEE-WEE LIU | Journal of Applied Physics | 13 | 13 | |
2005 | Visible photoluminescence from Ge quantum dots | CHEE-WEE LIU ; Sun, K.W.; Sue, S.H.; CHEE-WEE LIU | Physica E: Low-Dimensional Systems and Nanostructures | | | |
2011 | Voltage linearity improvement of HfO<inf>2</inf>-based metal-insulator- metal capacitors with H<inf>2</inf> O prepulse treatment | CHEE-WEE LIU ; Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; Chang, H.-L.; CHEE-WEE LIU | Journal of the Electrochemical Society | | | |
2019 | Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method | Tsou Y.-J; Chiu J.-C; Shih H.-C; CHEE-WEE LIU | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits | | | |
1998 | 以矽晶圓為基礎的長波長紅外線偵測器(新型SiGeC 材料之研究) | 劉致為 | | | | |
2007 | 先進CMOS元件及製程研究-子計畫四:遷移率增強技術(2/3) | 劉致為 | | | | |
2008 | 先進CMOS元件及製程研究-子計畫四:遷移率增強技術(3/3) | 劉致為 | | | | |
1999 | 具網路結合功能之半導體製造集結式機台─子計畫二:用於12吋晶圓製造之前段製程技術(1/3) | 劉致為 | | | | |
2000 | 具網路結合功能之半導體製造集結式機台─子計畫二:用於12吋晶圓製造之前段製程技術(2/3) | 劉致為 | | | | |