公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Gain-measurement of broadband quantum dot SOA by two-section technique | CHAO-HSIN WU ; CHING-FUH LIN ; Su, Y.-S.; Chang, W.-C.; Wu, C.-H.; Lin, C.-F.; CHAO-HSIN WU ; CHING-FUH LIN | Conference on Lasers and Electro-Optics Europe | | | |
2017 | Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance | Chang, H.-M.; Charnas, A.; Lin, Y.-M.; Ye, P.D.; Wu, C.-I.; CHIH-I WU ; CHAO-HSIN WU | Scientific Reports | 15 | 12 | |
2017 | The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment | Wu, C.-R.; Chang, X.-R.; Wu, C.-H.; Lin, S.-Y.; CHAO-HSIN WU | Scientific Reports | | | |
2020 | High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer | Luo Y.J; Sanyal I; Tzeng W.-C; Ho Y.-L; Chang Y.-C; Hsu C.-C; Chyi J.-I; CHAO-HSIN WU | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 | | | |
2020 | High fmax × LG Product of AlGaN/GaN HEMTs on Silicon with Thick Rectangular Gate | Chang L.-C; Hsu K.-C; Ho Y.-T; Tzeng W.-C; Ho Y.-L; CHAO-HSIN WU | IEEE Journal of the Electron Devices Society | | | |
2017 | High Performance MoS2 TFT using Graphene Contact First Process | C. S. Chang Chien; H. M. Chang; W. T. Lee; M. R. Tang; CHAO-HSIN WU ; SI-CHEN LEE | AIP Advance | 5 | 4 | |
2022 | High power 1.55 μm DFB laser with GHz modulation capability for low-orbit optical communication system | Liu, Te Hua; Cheng, Hao Tien; Yen, Hsiang Chun; Yee, Chee Keong; Yang, Yun Cheng; Hsu, Guei Ting; CHAO-HSIN WU | Conference Digest - IEEE International Semiconductor Laser Conference | 0 | 0 | |
2018 | High Speed Data Transmission under Voltage Modulation of Transistor Lasers | Tung, C.-T.; Chang, S.-W.; CHAO-HSIN WU | 23rd Opto-Electronics and Communications Conference, OECC 2018 | | | |
2021 | High thermal stability of 850 nm VCSELs with enhanced mask margin up to 85 °c for 100G-SR4 Operation | Cheng H.-T; Yang Y.-C; CHAO-HSIN WU | 2021 30th Wireless and Optical Communications Conference, WOCC 2021 | 3 | 0 | |
2020 | High-speed integrated micro-LED array for visible light communication | Lan, H.-Y.; Tseng, I.-C.; Lin, Y.-H.; Lin, G.-R.; Huang, D.-W.; DING-WEI HUANG ; GONG-RU LIN ; CHAO-HSIN WU | Optics Letters | 47 | 39 | |
2016 | High-speed modulation from the fast mode extraction of a photonic crystal light-emitting diode | Yu-Feng Yin; Wen-Yi Lan; Yen-Hsiang Hsu; Yuan-Fu Hsu; Chao-Hsin Wu; JIAN-JANG HUANG ; CHAO-HSIN WU | Japanese Journal of Applied Physics | 17 | 11 | |
2018 | High-Temperature Insensitivity of 50-Gb/s 16-QAM-DMT Transmission by Using the Temperature-Compensated Vertical-Cavity Surface-Emitting Lasers | Peng, C.-Y.; Tsai, C.-T.; Wang, H.-Y.; Wu, Y.-C.; Shih, T.-T.; Huang, J.J.; Kuo, H.-C.; Cheng, W.-H.; Lin, G.-R.; JIAN-JANG HUANG ; GONG-RU LIN ; CHAO-HSIN WU | Journal of Lightwave Technology | 9 | 7 | |
2020 | Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications | Zhang Y.-W; Wu B.-Y; Chen K.-C; Wu C.-H; Lin S.-Y.; CHAO-HSIN WU | Scientific Reports | 7 | | |
2003 | Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution | Lin, Ching-Fuh ; Su, Yi-Shin; Yu, Di-Ku; CHAO-HSIN WU ; Wu, Bing-Ruey | Applied Physics Letters | 9 | 8 | |
2003 | Improved temperature characteristics of semiconductor lasers due to Carrier redistribution among nonidentical multiple quantum wells | Wu, Chao-Hsin ; Yu, Di-Ku; CHING-FUH LIN | Pacific Rim Conference on Lasers and Electro-Optics, CLEO | 0 | 0 | |
2003 | Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells | CHAO-HSIN WU ; CHING-FUH LIN ; Wu, C.-H.; Lin, C.-F.; Yu, D.-K.; Wu, B.-R.; CHAO-HSIN WU ; CHING-FUH LIN | Proceedings of SPIE - The International Society for Optical Engineering | | | |
2004 | Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells | Lin, Ching-Fuh ; Su, Yi-Shin; Wu, Chao-Hsin ; Chang, Yu-Chia | Japanese Journal of Applied Physics | 1 | 1 | |
2004 | Influence of separate confinement heterostructure on carrier distribution in ingaasp laser diodes with nonidentical multiple quantum wells | Lin, Ching-Fuh ; Su, Yi-Shin; Wu, Chao-Hsin ; Chang, Yu-Chia | Japanese Journal of Applied Physics | | | |
2004 | Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells | Lin, Ching-Fuh ; Su, Y.-S.; CHAO-HSIN WU ; Shmavonyan, G.S. | IEEE Photonics Technology Letters | 20 | 16 | |
2014 | Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures | CHAO-HSIN WU ; Yang, H.-H.; Tu, W.-C.; Wang, H.-L.; CHAO-HSIN WU | Applied Physics Letters | | | |