公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Reliability screening of a-Si TFT circuits: Very-low voltage and I <inf>DDQ</inf> Testing | Shen, S.-T.; Liu, C.; Ma, E.-H.; Cheng, I.-C.; Li, J.C.-M.; I-CHUN CHENG ; CHIEN-MO LI | IEEE/OSA Journal of Display Technology | 2 | 1 | |
2006 | Self-aligned amorphous-silicon TFTs on clear plastic substrates | Cheng, I.-C.; Kattamis, A.Z.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | IEEE Electron Device Letters | 22 | 15 | |
2007 | Self-aligned nanocrystalline silicon thin-film transistor with deposited n+ source/drain layer | Cheng, I.-C.; Wagner, S.; I-CHUN CHENG | Materials Research Society Symposium | | | |
2003 | Silicon for thin-film transistors | Wagner, S.; Gleskova, H.; Cheng, I.-C.; Wu, M.; I-CHUN CHENG | Thin Solid Films | 96 | 82 | |
2008 | Silicon thin-film transistors on flexible polymer foil substrates | Cheng, I.-C.; Chen, J.Z.; I-CHUN CHENG | International Meeting on Information Display | | | |
2006 | SiNx barrier layers deposited at 250°C on a clear polymer substrate | Cherenack, K.; Kattamis, A.; Long, K.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | Materials Research Society Symposium | | | |
2007 | Stability of amorphous silicon thin film transistors under prolonged high compressive strain | Chen, J.-Z.; Cheng, I.-C.; Wagner, S.; Jackson, W.; Perlov, C.; Taussig, C.; I-CHUN CHENG | Materials Research Society Symposium | | | |
2007 | Stability of amorphous silicon thin film transistors under prolonged high compressive strain | Chen, J. Z.; Cherenack, K.; Tsay, C.; Cheng, I.-C.; Wagner, S.; Jackson, W.; Perlov, C.; Taussig, C. | MRS Proceedings | 3 | 0 | |
2006 | Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C | Long, K.; Kattamis, A.Z.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | IEEE Electron Device Letters | 96 | 82 | |
2006 | Stainless steel foil substrates: Robust, low-cost, flexible active-matrix backplane technology | Hong, Y.; Heller, G.; Cheng, I.-C.; Kattamis, A.; Wagner, S.; I-CHUN CHENG | International Meeting on Information Display | | | |
2013 | Strength scale behavior of nanoporous Ag, Pd and Cu foams | Cheng, I.-C.; Hodge, A.M.; I-Chung Cheng | Scripta Materialia | | | |
2005 | Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates | Cheng, I.-C.; Kattamis, A.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | Journal of the Society for Information Display | 54 | 42 | |
2020 | Synthesis and characterization of nanoporous copper thin films by magnetron sputtering and subsequent dealloying | Lee, Y.-Z.; Zeng, W.-Y.; Cheng, I.-C.; I-Chung Cheng | Thin Solid Films | | 14 | |
2007 | Technical issues of stainless steel foil substrates for OLED display applications | Hong, Y.; Chung, S.; Kattamis, A.; Cheng, I.-C.; Wagner, S.; I-CHUN CHENG | Proceedings of SPIE - The International Society for Optical Engineering | 4 | 0 | |
2008 | Temperature and active layer thickness dependent stability of on-plastic a-Si:H thin film transistors fabricated at 150°C | Chen, J.-Z.; Cheng, I.-C.; I-CHUN CHENG | 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008 | | | |
2008 | Temperature and humidity effects on the stability of on-plastic a-Si:H thin film transistors with various conduction channel layer thicknesses | Chen, J. Z.; Cheng, I.-C. | MRS Proceedings | 1 | 0 | |
2008 | Temperature and humidity effects on the stability of on-plastic a-Si:H thin film transistors with various conduction channel layer thicknesses | Chen, J.Z.; Cheng, I.-C.; I-CHUN CHENG | Materials Research Society Symposium | | | |
2006 | Thermomechanical criteria for overlay alignment in flexible thin-film electronic circuits | Gleskova, H.; Cheng, I.-C.; Wagner, S.; Suo, Z.; I-CHUN CHENG | Applied Physics Letters | 24 | 19 | |
2003 | Thin film transistors made of nanocrystalline silicon for CMOS on plastic | Cheng, I.-C.; Wagner, S.; I-CHUN CHENG | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
2000 | Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon | Cheng, I.-C.; Wagner, S.; Mulato, M.; I-CHUN CHENG | Materials Research Society Symposium | | | |