公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors | Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
2006 | Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors | CHEE-WEE LIU ; Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Japanese Journal of Applied Physics Part1 | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | CHEE-WEE LIU ; Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; CHEE-WEE LIU | Solid-State Electronics | | | |
2004 | Hole effective mass in strained Si<inf>1-x</inf>C<inf>x</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; Chang, S.T.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2016 | Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates | CHEE-WEE LIU ; Lan, H.-S.; CHEE-WEE LIU | ECS Transactions | | | |
1997 | Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys | CHEE-WEE LIU ; Lin, C.Y.; CHEE-WEE LIU | Applied Physics Letters | | | |
1997 | Hole effective masses in relaxed Si<inf>1-x</inf>C<inf>x</inf> and Si<inf>1-y</inf>Ge<inf>y</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; CHEE-WEE LIU | Applied Physics Letters | | | |
2007 | Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2000 | Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes | CHEE-WEE LIU ; Chang, S. T.; Liu, W. T.; MIIN-JANG CHEN ; CHING-FUH LIN | Applied Physics Letters | 23 | 20 | |
2012 | Hybrid CIS/Si near-IR sensor and 16% PV energy-harvesting technology | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2014 | Hysteresis reduction by fluorine incorporation into high permittivity tetragonal ZrO<inf>2</inf> on Ge | CHEE-WEE LIU ; Chang, H.-C.; Lin, C.-M.; Huang, C.-H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2006 | Imapct of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-si technology | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | CHEE-WEE LIU ; Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | | | |
2001 | Improved optimal aim strategy based multiple TCSC controllers for transient stability control of interconnected power system | CHEE-WEE LIU ; Yu, C.-S.; Liu, C.-W.; Jiang, J.-A.; CHEE-WEE LIU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
2009 | Improved SPICE macromodel of phase change random access memory | CHEE-WEE LIU ; Chang, H.-L.; Chang, H.-C.; Yang, S.-C.; Tsai, H.-C.; Li, H.-C.; CHEE-WEE LIU | 2009 International Symposium on VLSI Design, Automation and Test | | | |
2013 | Improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics treated by remote NH <inf>3</inf> plasma | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Lin, H.-C. ; Kuo, C.-L. ; Lee, M.-H.; CHEE-WEE LIU ; MIIN-JANG CHEN | Applied Surface Science | 11 | 11 | |
2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | | | |
2015 | In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2017 | Indication of band flattening at the Fermi level in a strongly correlated electron system | CHEE-WEE LIU ; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Scientific Reports | 22 | 22 | |
2011 | Influence of defects and interface on radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | | | |