Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2013 | Photo-Kelvin probe force microscopy for photocatalytic performance characterization of single filament of TiO<inf>2</inf> nanofiber photocatalysts | Wu, M.-C.; Liao, H.-C.; Cho, Y.-C.; T?th, G.; Chen, Y.-F.; Su, W.-F.; Kord?s, K.; YANG-FANG CHEN ; WEI-FANG SU | Journal of Materials Chemistry A | 37 | 34 | |
2014 | Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties | Chen, R. S.; Wang, W.C.; Chan, C.H.; Lu, M.L.; Chen, Y.F. ; Lin, H.C.; Chen, K.H.; Chen, L.C. | Applied Physics Letters | 17 | 16 | |
1993 | Photoconduction of synthetic pyrite FeS2 single crystals | YANG-FANG CHEN | Journal of Applied Physics | 26 | 24 | |
1998 | Photoconductivity in self-organized InAs quantum dots | Fan, J.C.; Lin, Y.J.; Chen, Y.F.; Chen, M.C.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Journal of Applied Physics | 7 | 7 | |
2008 | Photocurrent enhancement of SnO2 nanowires through Au-nanoparticles decoration | YANG-FANG CHEN | Optics Express | 53 | 51 | |
2007 | Photoelastic effect in ZnO nanorods | YANG-FANG CHEN | Nanotechnology | 20 | 19 | |
2020 | Photoelectronic memory based on nitride multiple quantum wells and the hybrid of graphene nanoflakes and a-IGZO film | Lin, T.-Y.; Chen, Y.-F.; Liou, Y.-R.; Lin, H.-Y.; Cai, S.-Y.; Liao, Y.-M.; YANG-FANG CHEN | Optics Express | 3 | 5 | |
2007 | Photogalvanic effects for interband absorption in AlGaNGaN superlattices | YANG-FANG CHEN | Applied Physics Letters | 26 | 25 | |
2007 | Photogalvanic effects for interband transition in p-Si0.5 Ge0.5 Si multiple quantum wells | CHIEH-HSIUNG KUAN ; YANG-FANG CHEN ; Wei, C.M.; Cho, K.S.; Chen, Y.F.; Peng, Y.H.; Chiu, C.W.; CHIEH-HSIUNG KUAN ; YANG-FANG CHEN | Applied Physics Letters | | | |
1997 | Photoluminescence and photothermal deflection spectroscopy of InAs quantum dot superlattices grown on GaAs by molecular beam epitaxy | YANG-FANG CHEN | Japanese Journal of Applied Physics, Part 2: Letters | 0 | | |
2007 | Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition | Lee, Z.S.; Feng, Z.C.; Li, A.G.; Tsai, H.L.; Yang, J.R.; Chen, Y.F.; Li, N.; Ferguson, I.T.; JER-REN YANG ; YANG-FANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
1996 | Photoluminescence from ordered and disordered Si-SiGe superlattices | YANG-FANG CHEN | Optical and Quantum Electronics | 0 | 0 | |
2015 | Photoluminescence mechanisms in porous silicon | Lin, C.-H.; YANG-FANG CHEN et al. | 1994 International Electron Devices and Materials Symposium | 0 | 0 | |
2006 | Photoluminescence properties of CdTe/CdSe core-shell type-II quantum dots | Wang, C.H.; Chen, T.T.; Tan, K.W.; Chen, Y.F.; Cheng, C.T.; Chou, P.T.; YANG-FANG CHEN ; PI-TAI CHOU | Journal of Applied Physics | 43 | 41 | |
1991 | Photoluminescence studies of hydrogen passivation of GaAs grown on InP substrates by molecular-beam epitaxy | YANG-FANG CHEN ; WEN-SHAN CHEN | Journal of Applied Physics | 7 | 8 | |
1995 | Photoluminescence study of highly mismatched In <inf>0.53</inf> Ga <inf>0.47</inf> As epilayers grown on InP-coated GaAs substrates | Chen, Y.F.; Shen, J.L.; Chang, I.M.; Chang, S.Z.; SI-CHEN LEE ; YANG-FANG CHEN | Journal of Applied Physics | 2 | 2 | |
1990 | Photoluminescence study of hydrogen passivation in GaAs and AlGaAs by the photochemical vapor deposition system | Chen, Y.-F.; Tsai, C.-S.; Chang, Y.; YUAN-HUEI CHANG ; YANG-FANG CHEN | Applied Physics Letters | 17 | 19 | |
2002 | Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP | Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 8 | 7 | |
1994 | Photoluminescence-excitation-correlation spectroscopic study of a high-density two-dimensional electron gas in GaAs/Al0.3Ga0.7As modulation-doped quantum wells | YANG-FANG CHEN | Physical Review B | 4 | 3 | |
2006 | Photoluminescent properties of InN epifilms | YANG-FANG CHEN | Semiconductor Science and Technology | 51 | 46 | |