公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction | Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN | IEEE Electron Device Letters | | 4 | |
1993 | Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | IEEE Electronics Device | | | |
1993 | Injection Current Model of a MOS Diode under Charge-Sharing Mode Readout Operation | Wu, C.-W.; HAO-HSIUNG LIN | IEEE Transactions on Electron Devices | | | |
2005 | InPSb bulk layers grown by gas source molecular beam epitaxy | G. Tsai; HAO-HSIUNG LIN | Mid-infrared optoelectronics: Materials and Devices (MIOMD 7) | | | |
1997 | Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors | Tsai, J.-H.; Cheng, S.-Y.; Lour, W.-S.; Liu, W.-C.; HAO-HSIUNG LIN | Semiconductor Science and Technology | | | |
2018 | Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, rutherford backscattering, grazing incidence X-ray diffraction and Variable Angle Spectroscopic Ellipsometry | Luo, X.; Li, Y.; Yang, H.; Liang, Y.; He, K.; Sun, W.; Yao, S.; Lu, X.; Wan, L.; Feng, Z.; HAO-HSIUNG LIN | Crystals | 52 | 54 | |
2010 | Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy | Y. R. Lan; C. J. Wu; H. H. Lin; T. S. Chan; Z. C. Feng; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2013 | Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes | C. X. Wang; Y. T. He; M. T. Niu; J. Y. Yao; E. Jones; Z. R. Qiu; X. Zhang; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | IEDMS 2013, international electron devices and materials symposium | | | |
1993 | Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode | Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄 ; Lin, Hao-Hsiung | 19th EDMS | | | |
2016 | Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy | Xin, B.; Zhang, Y.-M.; Wu, H.-M.; Feng, Z.C.; Lin, H.-H.; Jia, R.-X.; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | | | |
2004 | Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations | Hang, D.R.; D. K. Shih; C. F. Huang; W. K. Hung; Y. H. Chang; HAO-HSIUNG LIN ; YANG-FANG CHEN | Physica E: Low-Dimensional Systems and Nanostructures | 8 | 7 | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | C. W. Liu; M. H. Lee; C. F. Lin; I. C. Lin; W. T. Liu; HAO-HSIUNG LIN | 1999 IEDM | | | |
2012 | Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy | C. L. Chiou; Z. C. Feng; HAO-HSIUNG LIN | OPTIC 2012 | | | |
1996 | Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors | Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung ; Huang, Chao-Hsing | Solid-State Electronics | 0 | 0 | |
2010 | Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin; T. C. Ma; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2004 | Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy | Chang, F.Y.; Lee, J.D.; HAO-HSIUNG LIN | Electronics Letters | | 6 | |
2002 | Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy | Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung ; Chen, Jhe-Ren | Electronics Letters | 17 | 16 | |
2002 | Low-threshold ~1.3m GaAsSb quantum well laser | P. W. Liu; M. H. Lee; J. R. Chen; HAO-HSIUNG LIN | 2002 IEDMS | | | |
1997 | Lumped-Element Compensated High/Low-Pass
Balun Design for MMIC Double-Balanced Mixer | Chiou, Wann-Kaeo; Lin, Hao-Hsiung ; Chang, Chi-Yang | IEEE Microwave and Guided Wave Letters | | | |
1997 | Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer | Chiou, H.-K.; Lin, H.-H.; Chang, C.-Y.; HAO-HSIUNG LIN | IEEE Microwave and Guided Wave Letters | | | |