公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells | C. H. Lee; Y. H. Chang; C. F. Huang; M. Y. Huang; H. H. Lin; C. P. Lee; HAO-HSIUNG LIN | Chinese Journal of Physics | | | |
1986 | Transport theory of the double heterojunction bipolar transistor based on current balancing concept | Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 40 | 37 | |
1987 | Transport Theory of the Double Heterojunction Bipolar Transistor Based on Current Balancing Concept | Lee, Si-Chen ; Lin, Hao-Hsiung | Jouranl of Applied Physics | | | |
2013 | Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | | | |
1993 | Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | 1993 Symposium on Semiconductor Modeling and Simulation | | | |
1993 | Two-dimensional calculation on the band-to-band tunneling current of iridium antimonide charge injection devices | Wu, C.-W.; HAO-HSIUNG LIN | SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation | | | |
1991 | Two-Dimensional Simulation of the Electric Field Spike of Indium Antimonide Charge Injection Devices | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | Solid State Electronics | | | |
1989 | Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's) | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | 15th EDMS | | | |
1990 | Two-dimensional simulation on the electric field spike of indium antimonide charge injection devices | Wu, Chao-Wen; Lin, Hao-Hsiung | Solid-State Electronics | | | |
1991 | Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on Inp | Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
1993 | Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP | Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | Journal of Vacuum Science & Technology. B | | | |
1998 | Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum well | Kang, J.U.; Khurgin, J.B.; Yang, C.C.; Lin, H.H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 7 | |
1993 | Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors | Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | Nonlinear Guided-Wave Phenomena | | | |
1996 | An unified GSMBE growth model for GaInAsP on InP and GaAs | Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung | Eighth International Conference on Indium Phosphide and Related Materials, 1996. IPRM '96 | 0 | 0 | |
2007 | Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies | T. T. Chen,; C. L. Cheng,; F. Y. Chang,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN ; YANG-FANG CHEN | Physics Review B | 45 | 47 | |
2004 | Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory | Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN | IEEE Electron Device Letters | | | |
2002 | V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | 2001 MRS Fall Meeting | | | |
1998 | Very thin layers of TIP grown on InP using gas source molecular beam epitaxy | Liu, J.-S.; Wang, J.-S.; HAO-HSIUNG LIN | Journal of Crystal Growth | 1 | 2 | |
1998 | Very thin layers of TlP grown on InP using gas source molecular beam epitaxy | Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung | Journal of Crystal Growth | | | |
2011 | X-ray absorption find structures of InPSb alloys | C. J. Wu; K. T. Chen; Z. C. Feng; W. M. Chang; C. C. Yang; HAO-HSIUNG LIN | International photonics conference 2011 (IPC2011) | | | |