公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1992 | Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature | Kuo, J.B.; Sim, J.H.; KuoJB | Electronics Letters | | | |
2012 | Design of Distortionless Interconnects via Main/auxiliary Structure with LC Line for High Speed On-chip Transmission | T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO | ICSICT | | | |
2009 | Design Optimization of Low-Power 90nm CMOS SOC Applications Using 0.5V Bulk PMOS Dynamic-Threshold with Dual Threshold (MTCMOS) BP-DTMOS-DT Technique | C. H. Lin; J. B. Kuo; JAMES-B KUO | Power and Timing Optimization Symposium | | | |
1991 | Device-level analysis of a 1 μm BiCMOS inverter circuit operating at 77 K using a modified PISCES program | Kuo, J.B.; Chen, Y.W.; Lou, K.H.; KuoJB | Custom Integrated Circuits Conference, 1991 | 0 | 0 | |
1994 | Device-level analysis of a BiPMOS pull-down device structure for low-voltage dynamic BiCMOS VLSI | Kuo, J.B.; Su, K.W.; Lou, J.H.; Ma, Y.; Chen, S.S.; Chiang, C.S.; KuoJB | Custom Integrated Circuits Conference, 1994 | 0 | 0 | |
1991 | Device-level transient analysis of a 1 μm six-transistor BiCMOS inverter circuit using a large-scale quasi-3D device simulator | Kuo, J.B.; Chen, Y.W.; KuoJB | Bipolar Circuits and Technology Meeting, 1991. | 0 | 0 | |
2005 | Energy-Efficient CMOS Large-Load driver circuit with the complementary adiabatic/bootstrap (CAB) technique for Low-Power TFT-LCD system applications | G. Y. Liu; N. C. Wang; JAMES-B KUO | ISCAS | 1 | 0 | |
2005 | Evolution of bootstrap techniques in low-voltage CMOS digital VLSI circuits for SOC applications | JAMES-B KUO | IWSOC | | | |
2004 | Evolution of low-voltage CMOS digital VLSI circuits using bootstrap technique | KuoJB | Future of Electron Devices, 2004. International Meeting for | 0 | 0 | |
2011 | Evolution of SOI CMOS Devices and Circuits for Low0Power/ Low Vltage SOC Applications | JAMES-B KUO | Electron Devices Innovation Symposium | | | |
2012 | Floating-Body Kink Effect: Ply-Si TFT versus SOI CMOS | T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO | Eurosoi Conference | | | |
2005 | Floating-Body Kink-Effect RElated Capacitance Behavior of Nanometer PD SOI NMOS Devices | G. S. Lin; J. B. Kuo; JAMES-B KUO | EDMS | | | |
2015 | Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect | S. K. Hu; J. B. Kuo; Y. J. Chen; JAMES-B KUO | Spanish Conference on Electron Devices | | | |
2009 | Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device | H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | EUROSOI | 0 | 0 | |
2009 | Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO | International Semiconductor Devices Research Symposium | 0 | | |
2012 | Foating-Body Kink-Effect Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT | T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO | IEEE Transactions on Electron Devices | 8 | 6 | |
2006 | Fringing Effects of Nanometer SOI CMOS Devices | JAMES-B KUO | NIEL | | | |
2002 | Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer | S. C. Lin; J. B. Kuo; JAMES-B KUO | IEEE SOI Conference Proc | 2 | 0 | |
2005 | Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation | G. S. Lin; J. B. Kuo; JAMES-B KUO | EDSM | | | |
2012 | Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect | C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | Solid State Electronics | 5 | 4 | |