公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Long-range ferromagnetic ordering at room temperature in Co+ implanted TiO2 nanorods | Dhara, S.; Wu, J.J.; Mangamma, G.; Bera, S.; Wu, C.T.; Magudapathy, P.; Yu, C.C.; Kamruddin, M.; Nair, K.G.M.; Tyagi, A.K.; Chen, L.C. ; Chen, K.H. | Nanotechnology | 9 | 9 | |
2009 | Low methanol-permeable polyaniline/Nafion composite membrane for direct methanol fuel cells | Wang, C.-H.; Chen, C.-C.; Hsu, H.-C.; Du, H.-Y.; Chen, C.-P.; Hwang, J.-Y.; Chen, L.C. ; Shih, H.-C.; Stejskal, J.; Chen, K.H. | Journal of Power Sources | 86 | 82 | |
2012 | Magnetic-field and temperature dependence of the energy gap in InN nanobelt | Aravind, K.; Su, Y.W.; Chung, D.S.; Kuo, W.; Wu, C.S.; Chang-Liao, K.S.; Chen, K.H.; Chen, L.C. ; Chen, C.D. | AIP Advances | 1 | 1 | |
2009 | Magnetoresistance fluctuations in a weak disorder indium nitride nanowire | Su, Y.W.; Aravind, K.; Wu, C.S.; Kuo, W.; Chen, K.H.; Chen, L.C. ; Chang-Liao, K.S.; Su, W.F.; WEI-FANG SU | Journal of Physics D: Applied Physics | 2 | 2 | |
2009 | The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: Atomistic origin of planar defect formation | Das, C.R.; Dhara, S.; Hsu, H.C.; Chen, L.C. ; Jeng, Y.R.; Bhaduri, A.K.; Raj, B.; Chen, K.H.; Albert, S.K. | Journal of Raman Spectroscopy | 8 | 7 | |
2009 | Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires | Chen, R.S.; Lu, C.Y.; Chen, K.H.; Chen, L.C. | Applied Physics Letters | 47 | 42 | |
2006 | Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching | Hsu, C.H.; Huang, Y.F.; Chen, L.C. ; Chattopadhyay, S.; Chen, K.H.; Lo, H.C.; Chen, C.F. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 22 | 17 | |
2007 | Multiphonon Raman scattering in GaN nanowires | Dhara, S.; Chandra, S.; Mangamma, G.; Kalavathi, S.; Shankar, P.; Nair, K.G.M.; Tyagi, A.K.; Hsu, C.W.; Kuo, C.C.; Chen, L.C. ; Chen, K.H.; Sriram, K.K. | Applied Physics Letters | 51 | 52 | |
2006 | Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C. ; Chen, K.H.; Santhakumar, K.; Soga, T. | Applied Physics Letters | 6 | 6 | |
2008 | Novel copper-zinc oxide arrayed nanoatalysts for hydrogen production applications | Lin, Y.G.; Hsu, Y.K.; Chen, S.Y.; Chen, L.C. ; Chen, K.H. | ECS Transactions | 1 | 0 | |
2007 | Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: H effects of nano-structural features | Lee, Z.S.; Feng, Z.C.; Tsai, H.; Yang, J.; Li, A.G.; Chen, L.C. ; Chen, K.H.; Chen, Y.F.; Ferguson, I.T.; JER-REN YANG ; YANG-FANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
2009 | Optical and structural properties of Mg-ion implanted GaN nanowires | Huang, P.J.; Chen, C.W.; Chen, J.Y.; Chi, G.C.; Pan, C.J.; Kuo, C.C.; Chen, L.C. ; Hsu, C.W.; Chen, K.H.; Hung, S.C.; Chang, C.Y.; Pearton, S.J.; Ren, F. | Vacuum | 11 | 11 | |
2005 | Optical characterization of GaN by N+ implantation into GaAs at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C. ; Chen, K.H.; Santhakumar, K.; Soga, T. | Applied Physics Letters | 14 | 13 | |
2005 | Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection | Chen, C.W. ; Huang, C.C.; Lin, Y.Y.; Chen, L.C.; Chen, K.H.; WEI-FANG SU | Diamond and Related Materials | 55 | 53 | |
2014 | Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire | Talwar, D.N.; Liao, Y.C.; Chen, L.C. ; Chen, K.H.; Feng, Z.C. | Optical Materials | 6 | 6 | |
2011 | Origin and tuning of surface optic and long wavelength phonons in biomimetic GaAs nanotip arrays | Huang, Y.-F.; Chattopadhyay, S.; Hsu, H.-C.; Wu, C.-T.; Chen, K.H.; Chen, L.-C. | Optical Materials Express | 1 | 1 | |
2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study | Chen, R.S.; Tsai, H.Y.; Huang, Y.S.; Chen, Y.T.; Chen, L.C. ; Chen, K.H. | Applied Physics Letters | 18 | 18 | |
2014 | Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties | Chen, R. S.; Wang, W.C.; Chan, C.H.; Lu, M.L.; Chen, Y.F. ; Lin, H.C.; Chen, K.H.; Chen, L.C. | Applied Physics Letters | 17 | 16 | |
2011 | Photoconduction mechanism of oxygen sensitization in InN nanowires | Chen, R.S.; Yang, T.H.; Chen, H.Y.; Chen, L.C. ; Chen, K.H.; Yang, Y.J.; Su, C.H.; Lin, C.R. | Nanotechnology | 11 | 11 | |