公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2006 | Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance | Shi, J.-W.; Chiu, P.-H.; Huang, F.-H.; Wu, Y.-S.; Lu, Ja-Yu; Sun, C.-K.; Liu, C.-W.; Chen, P.-S. | Applied Physics Letters | |||
2006 | SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance | Shi, J.-W.; Chiu, P.-H.; Huang, F.-H.; Wu, Y.-S.; Lu, J.-Y.; CHI-KUANG SUN ; CHEE-WEE LIU ; Chen P.-S. | Applied Physics Letters | 6 | 4 |