https://scholars.lib.ntu.edu.tw/handle/123456789/500725
標題: | SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance | 作者: | Shi, J.-W. Chiu, P.-H. Huang, F.-H. Wu, Y.-S. Lu, J.-Y. CHI-KUANG SUN CHEE-WEE LIU Chen P.-S. |
公開日期: | 2006 | 卷: | 88 | 期: | 19 | 來源出版物: | Applied Physics Letters | 摘要: | We demonstrate a SiSiG -based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p -type-doped Si Si0.5 Ge0.5 -based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the SiSiGe multiple quantum well. An extremely high bandwidth-efficiency product performance (10 GHz, 276%, 27.6 GHz) and high peak output voltage (1.5 V) have been achieved simultaneously by operating this device in the avalanche regime. © 2006 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/500725 | ISSN: | 00036951 | DOI: | 10.1063/1.2202101 | SDG/關鍵字: | Absorption; Avalanche diodes; Bandwidth; Optimization; Semiconductor materials; Semiconductor quantum wells; Edge-coupled photodiodes; High-power performance; Photoabsorption; Photodiodes |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。