公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Solid-State Electronics | 167 | 153 | |
1998 | Effect of temperature on Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG | Applied Physics Letters | 217 | 209 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | IEEE Electron Device Letters | 225 | | |
1999 | GaN metal oxide semiconductor field effect transistors | Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; MINGHWEI HONG | Solid-State Electronics | 7 | 0 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 35 | 40 | |