Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2007 | Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors | Ho, W. S.; Huang, C.-F.; Chang, S. T.; CHEE-WEE LIU ; YAO-JOE YANG | Applied Physics Letters | 103 | 98 |