公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Temperature dependence of the surface plasmon coupling with an InGaNGaN quantum well | CHIH-CHUNG YANG ; Lu, Y.-C.; Chen, C.-Y.; Yeh, D.-M.; Huang, C.-F.; Tang, T.-Y.; Huang, J.-J.; CHIH-CHUNG YANG | Applied Physics Letters | | | |
2007 | Temperature-dependent behaviors of the surface plasmon coupling with an InGaN/GaN quantum well | CHIH-CHUNG YANG ; Lu, Y.-C.; Chen, C.-Y.; Yeh, D.-M.; Huang, C.-F.; Tang, T.-Y.; Huang, J.-J.; CHIH-CHUNG YANG | 2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS | | | |
2007 | The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes | Lee, K.-Y.; Huang, C.-F.; Chen, W.; Capano, M.A.; KUNG-YEN LEE | Physica B: Condensed Matter | | | |
2006 | The process and optoelectronic characterization of Ge-on-insulator | Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; CHEE-WEE LIU | ECS Transactions | 1 | 0 | |
2010 | Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors | CHEE-WEE LIU ; Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2006 | Transmission electron microscopy study on pre-strained InGaN/GaN quantum wells | CHIH-CHUNG YANG ; Chen, Y.-S.; Yao, L.-C.; Lin, Y.-L.; Hung, L.; Huang, C.-F.; Tang, T.-Y.; Huang, J.-J.; Shiao, W.-Y.; CHIH-CHUNG YANG | Journal of Crystal Growth | | | |
2008 | White-light light-emitting device based on surface plasmon-enhanced CdSeZnS nanocrystal wavelength conversion on a blue/green two-color light-emitting diode | CHIH-CHUNG YANG ; Yeh, D.-M.; Huang, C.-F.; Lu, Y.-C.; CHIH-CHUNG YANG | Applied Physics Letters | | | |
2007 | X-ray diffraction study on an InGaNGaN quantum-well structure of prestrained growth | CHIH-CHUNG YANG ; Shiao, W.-Y.; Huang, C.-F.; Tang, T.-Y.; Huang, J.-J.; Lu, Y.-C.; Chen, C.-Y.; Chen, Y.-S.; CHIH-CHUNG YANG | Journal of Applied Physics | | | |
2012 | XRD characterization for Al- and N-doped 3C-SiC on Si (100) substrate after pulsed excimer laser anneal | Lee, K.-Y.; Huang, Y.-H.; Huang, C.-F.; Chung, C.Y.; Lin, S.C.; KUNG-YEN LEE | Materials Science Forum | 1 | 0 | |