公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2007 | Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) | Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; MINGHWEI HONG ; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others | Applied Physics Letters | | | |
2007 | Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN | Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; MINGHWEI HONG ; Chiu, YN; Kwo, J; Wang, Yeong-Her; others | | | | |
2007 | Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures | Hsu, YL; Lee, YJ; Chang, YH; Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2008 | Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric | Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; MINGHWEI HONG ; Kwo, J | 2008 International Symposium on VLSI Technology, Systems and Applications | | | |
2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al̃ 2Õ 3 | Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; MINGHWEI HONG | Applied Physics Letters | | | |
2007 | The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface | Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |