Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
2007 | STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices | I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO | IEEE International Semicondcutor Device Research Symp (ISDRS) | 3 | 0 | |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS | |||
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | |||
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference | |||
2014 | Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects | D. H. Lung; J. B. Kuo; JAMES-B KUO | EUROSOI | |||
2002 | The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure | J. B. Kuo; S. C. Lin; JAMES-B KUO | Hong Kong Electron Devices Meeting | 2 | 0 | |
2008 | Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects | J. S. Su; J. B. Kuo; JAMES-B KUO | IEDMS | |||
2007 | Triple Threshold Static Power Minimization in High-Level Synthesis of VLSI CMOS | H. Chen; J. B. Kuo; M. Syrzycki; JAMES-B KUO | Power and Timing Modeling and Optimization Conf (PATMOS) | |||
2007 | Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology | H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO | Canadian Conference on Electrical and Computer Engineering | 7 | 0 | |
2012 | Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect | S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | Eurosoi Conference | |||
2013 | Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect | D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | International Electron Devices and Material Symposium | |||
2013 | Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect | D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | International Semiconductor Devices Research Symposium |