公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | Electron ballistic current enhancement of Ge<inf>1-x</inf>Sn<inf>x</inf> FinFETs | CHEE-WEE LIU ; Lan, H.-S.; CHEE-WEE LIU | 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | | | |
2011 | Electron scattering in Ge metal-oxide-semiconductor field-effect transistors | CHEE-WEE LIU ; Lan, H.-S.; Chen, Y.-T.; Hsu, W.; Chang, H.-C.; Lin, J.-Y.; Chang, W.-C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2016 | Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates | Lan, H.-S.; CHEE-WEE LIU | ECS Transactions | | | |
2012 | Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain | CHIH-WEN LIU ; Lan, H.-S.; Chen, Y.-T.; Lin, J.-Y.; CHIH-WEN LIU | ECS Transactions | | | |
2015 | In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2011 | Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates | CHEE-WEE LIU ; Chen, Y.-T.; Lan, H.-S.; Hsu, W.; Fu, Y.-C.; Lin, J.-Y.; CHEE-WEE LIU | Applied Physics Letters | | | |
2010 | Strain-enhanced photoluminescence from Ge direct transition | Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; YUH-RENN WU ; CHEE-WEE LIU ; Tseng, H.-H. | Applied Physics Letters | 81 | 70 | |
2011 | Theoretical and experimental demonstration of electronic state of GeO 2 | CHIH-WEN LIU ; Chang, H.-C.; Lu, S.-C.; Chang, W.-C.; Chou, T.-P.; Lan, H.-S.; Lin, C.-M.; CHIH-WEN LIU | ECS Transactions | | | |