公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy | Lin, R.-M.; Tang, S.-F.; SI-CHEN LEE ; CHIEH-HSIUNG KUAN ; Chen, G.-S.; Sun, T.-P.; Wu, J.-C. | IEEE Transactions on Electron Devices | 31 | 30 | |
2000 | Study of current leakage in InAs p-i-n photodetectors | CHIEH-HSIUNG KUAN ; Lin, R.-M.; Tang, S.-F.; CHIEH-HSIUNG KUAN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2001 | Temperature-stable (wavelength ∼ 1μm) InAs/GaAs quantum dot light-emitting diode | Tang, S.-F.; Lin, S.-Y.; Lee, S.-C.; Tsai, C.-C.; SI-CHEN LEE | IEEE Conference on Nanotechnology | 2 | 0 | |
2007 | Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays | Chang, C.-Y.; Chang, H.-Y.; Chen, C.-Y.; Tsai, M.-W.; Chang, Y.-T.; SI-CHEN LEE ; Tang, S.-F. | Applied Physics Letters | 59 | 64 | |