公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | New materials for post-Si computing | CHEE-WEE LIU ; Liu, C.W.; \\Ostling, M.; Hannon, J.B.; CHEE-WEE LIU | MRS Bulletin | | | |
2019 | Ni, Pt, and Ti stanogermanide formation on Ge<inf>0.92</inf>Sn<inf>0.08</inf> | Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-V.; Lu, F.-L.; Liu, C.W.; Holmes, J.D.; Duffy, R.; CHEE-WEE LIU | 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 | | | |
2001 | Novel Methods to Incorporate Deuterium in the MOS Structures | Lee, M.H.; Lin, C.-H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2000 | A Novel Photodetector Using MOS Tunneling Structures | Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; LiuCW | IEEE Electron Device Letters | | | |
2000 | Novel photodetector using MOS tunneling structures | CHEE-WEE LIU ; Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2020 | Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02nGAAFETs | Lin, S.-Y.; Liu, H.-H.; Tu, C.-T.; Huang, Y.-S.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 2 | 2 | |
2003 | Optimal SiGe:C HBT module for BiCMOS applications | Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2001 | Optimum Ge profile design for base transit time minimization of SiGe HBT | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lin, C.-H.; CHEE-WEE LIU | Asia-Pacific Microwave Conference Proceedings, APMC | | | |
2001 | Optimum Ge profile design for base transit time minimization of SiGe HBT | Chang, S.T.; Liu, C.W.; Lin, C.H. | Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific | 0 | 0 | |
2002 | Oxide roughness effect on tunneling current of MOS diodes | Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W. | IEEE Transactions on Electron Devices | | | |
2007 | Performance enhancement of the nMOSFET low-noise amplifier by package strain | Hua, W.-C.; Chang, H.-L.; Wang, T.; Lin, C.-Y.; Lin, C.-P.; Lu, S.S.; Meng, C.C.; Liu, C.W.; SHEY-SHI LU ; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 1 | 1 | |
1993 | Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition | CHEE-WEE LIU ; Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Science and Engineering B | | | |
1992 | Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | | | |
2011 | Physical mechanism of HfO<inf>2</inf>-based bipolar resistive random access memory | CHEE-WEE LIU ; Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | | | |
2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 91 | 0 | |
2012 | Planar and 3D Ge FETs | CHEE-WEE LIU ; Liu, C.W.; Chang, H.-C.; Lin, C.-M.; Chen, Y.-T.; CHEE-WEE LIU | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology | | | |
2001 | A PMOS Tunneling Photodetector | Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H. | IEEE Transactions on Electron Devices | | | |
2008 | Polarity change of threshold voltage shifts for n-channel polycrystalline silicon thin-film transistors stressed by negative gate bias | CHEE-WEE LIU ; Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | ECS Transactions | | | |
1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | | | |