公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Determination of thickness and lattice distortion for the individual layer of strained Al <inf>0.14</inf>Ga <inf>0.86</inf>NGaN superlattice by high-angle annular dark-field scanning transmission electron microscopy | Shiojiri, M.; ?eh, M.; ?turm, S.; Chuo, C.C.; Hsu, J.T.; Yang, J.R.; Saijo, H.; JER-REN YANG | Applied Physics Letters | | | |
2005 | Determination of thickness and lattice distortion for the individual layer of strained AlGaN/GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy | Shiojiri, M.; Ceh, M.; Sturm, S.; Chuo, C.C.; Hsu, J. T.; Yang, J. R.; Sajio, H. | Applied | | | |
2002 | Direct determination of atomic structure in multiple quantum wells InGaN/GaN | Watanabe, K.; Yang, J.-R.; Nakanishi, N.; Inoke, K.; Shiojiri, M.; JER-REN YANG | Applied Physics Letters | | | |
2007 | Electron Microscopy Studies of GaN-Based violet laser diodes | Shiojiri, M.; Yang, J. R. | Journal of Microscopy Society of Thailand | | | |
2003 | Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN | Watanabe, K.; Yang, J.R.; Huang, S.Y.; Inoke, K.; Hsu, J.T.; Tu, R.C.; Yamazaki, T.; Nakanishi, N.; Shiojiri, M.; JER-REN YANG | Applied Physics Letters | | | |
2004 | High-resolution scanning electron microscopy observation of GaN/AlGaN strained-layer superstructures in GaN-based violet laser diodes | Saijo, H.; Nakagawa, M.; Yamada, M.; Hsu, J.-T.; TU, R.-C.; Yang, J.-R.; Shiojiri, M.; JER-REN YANG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
2019 | Intrinsic twin boundary of ?-MgZn2 precipitates in the AA7050 aluminium alloy | Tsai-Fu, C.; Yang, Y.-L.; Shiojiri, M.; Hsiao, C.-N.; Li, W.-C.; Yang, J.-R.; JER-REN YANG | Procedia Manufacturing | | | |
2004 | Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes | Saijo, H.; Hsu, J.T.; Tu, R.C.; Yamada, M.; Nakagawa, M.; Yang, J.R.; Shiojiri, M.; JER-REN YANG | Applied Physics Letters | | | |
2007 | Observation of high density INGaN quantum dots | Tsai, H. L.; Wang, T. Y.; Yang, J. R.; Wang, T. C.; Hsu, J. T.; Shiojiri, M. | Journal of Applied Physics | | | |
2007 | Observation of ultrahigh density InGaN quantum dots | Tsai, H.L.; Wang, T.Y.; Yang, J.R.; Wang, T.C.; Hsu, J.T.; Shiojiri, M.; JER-REN YANG | Journal of Applied Physics | | | |
2020 | Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO 2 thin films by the TiN capping engineering | Wang, C.-Y.; Wang, C.-I.; Yi, S.-H.; Chang, T.-J.; Chou, C.-Y.; Yin, Y.-T.; Shiojiri, M.; Chen, M.-J.; MIIN-JANG CHEN | Materials and Design | | | |
2007 | Structural analysis of strained p -type AlGaNGaN superlattice | Tsai, H.L.; Wang, T.Y.; Yang, J.R.; Chuo, C.C.; Hsu, J.T.; ?eh, M.; Shiojiri, M.; JER-REN YANG | Journal of Applied Physics | | | |
2007 | Structural analysis of strained p-type AlGaN/GaN superlattice | Tsai, H. L.; Wang, T. Y.; Yang, J. R.; Chuo, C. C.; Hsu, J. T.; Ceh, M.; Shiojiri, M. | Journal of Applied | | | |
2006 | Structural and compositional analyses of a strained AIGaN/GaN superlattice | Shiojiri, M.; ?eh, M.; ?turm, S.; Chuo, C.C.; Hsu, J.T.; Yang, J.R.; Saijo, H.; JER-REN YANG | Journal of Applied Physics | | | |
2006 | Structural and compositional analyses of a strained AlGaN/GaN superlattice | Shiojiri, M.; M.. Ceh , Sturm, S.; Chuo, C. C.; Hsu, J. T.; Yang, J. R.; Saijo, H. | Journal of Applied | | | |
2015 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions | Kawasaki, M.; Hsiao, C.N.; Yang, J.R.; Shiojiri, M.; JER-REN YANG | Micron | | | |
2013 | Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering | Chen, Y.Y.; Yang, J.R.; Cheng, S.L.; Shiojiri, M.; JER-REN YANG | Thin Solid Films | | | |
2006 | Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers | Shiojiri, M.; Chuo, C.C.; Hsu, J.T.; Yang, J.R.; Saijo, H.; JER-REN YANG | Journal of Applied Physics | | | |
2006 | Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers | Shiojiri, M.; Chuo, C. C.; Hsu, J. T.; Yang, J. R.; Saijo, H. | Journal of Applied Physics 99: | | | |
2010 | The structure and ultraviolet electroluminescence of n-ZnO-SiO 2-ZnO nanocomposite/p-GaN heterojunction LED | Tsai, H.L.; Li, W.C.; Chen, M.J.; Shiojiri, M.; JER-REN YANG ; MIIN-JANG CHEN | ECS Transactions | 2 | 0 | |