Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2007 | Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO<inf>2</inf> for gate dielectric applications | Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG | Journal of the Electrochemical Society | 40 | 37 | |
2006 | Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>As | Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 142 | 124 | |