公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2018 | Analysis of Negative Capacitance UTB SOI MOSFETs considering Line-Edge Roughness and Work Function Variation | Chiu P.-C; Hu V.P.-H.; VITA PI-HO HU | 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings | 4 | 0 | |
2017 | Analysis of subthreshold swing and internal voltage amplification for hysteresis-free negative capacitance FinFETs | Chiu P.-C; Hu V.P.-H.; VITA PI-HO HU | 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings | 5 | 0 | |
2018 | Negative capacitance enables FinFET and FDSOI scaling to 2 nm node | Hu V.P.-H; Chiu P.-C; Sachid A.B; Hu C.; VITA PI-HO HU | Technical Digest - International Electron Devices Meeting, IEDM | 17 | 0 |