公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2016 | Enhanced Saturation Current Sensitivities to Charge Trapping and Illumination in MOS Tunnel Diode by Inserting Metal in Gate Dielectric | J.Y.Chen; W.C.Kao; JENN-GWO HWU | Applied Physics A | 1 | 1 | |
2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
2016 | Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism | W.C.Kao; J.Y.Chen; J.G.Hwu; JENN-GWO HWU | Applied Physics Letters | 5 | 5 | |
2016 | Two States Phenomenon Induced by Neighboring Device Coupling Effect in MIS(p) Tunnel Current | W.C.Kao; J.Y.Chen; J.G,Hwu; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 |