Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG | Applied Physics Letters | 79 | 80 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
1996 | Thermodynamic and photochemical stability of low interface state density Ga<inf>2</inf>O<inf>3</inf>-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG | Applied Physics Letters | 26 | 29 |