公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2009 | A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows | Philip C. W. Ng; Kuen-Yu Tsai; Yen-Min Lee; Ting-Han Pei; Fu-Min Wang; Jia-Han Li; KUEN-YU TSAI ; JIA-HAN LI | Lithography Asia 2009 - Proc. SPIE | 3 | 0 | |
2008 | A new method to improve accuracy of leakage current estimation for transistors with non-rectangular gates due to sub-wavelength lithography effects | Kuen-Yu Tsai; Meng-Fu You; Yi-Chang Lu; Philip C. W. Ng; YI-CHANG LU ; KUEN-YU TSAI | ICCAD 2008, IEEE/ACM International Conference on Computer-Aided Design | 9 | 0 | |
2010 | A non-delta-chrome OPC methodology for nonlinear process models | Philip C. W. Ng; Kuen-Yu Tsai; Lawrence S. Melvin III; KUEN-YU TSAI | The 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication | |||
2010 | A non-delta-chrome OPC methodology for process models with three-dimensional mask effects | Philip C. W. Ng; Kuen-Yu Tsai; Chih-Hsien Tang; Lawrence S. Melvin III; KUEN-YU TSAI | Advanced Lithography 2010 | 1 | 0 | |
2008 | A novel curve-fitting procedure for determining proximity effect parameters in electron beam lithography | Chun-Hung Liu; Hoi-Tou Ng; Philip C. W. Ng; Kuen-Yu Tsai; Shy-Jay Lin; Jeng-Horng Chen; KUEN-YU TSAI | Lithography Asia 2008 - Proc. SPIE | 5 | 0 | |
2010 | Impact of process effects correction strategies on critical dimension and electrical characteristics variabilities in extreme ultraviolet lithography | Philip C. W. Ng; Sheng-Wei Chien; Bo-Sen Chang; Kuen-Yu Tsai; Yi-Chang Lu; KUEN-YU TSAI | International Microprocesses and Nanotechnology Conference 2010 | |||
2007 | Impacts of optical proximity correction settings on electrical performances | Meng-Fu You; Philip C. W. Ng; Yi-Sheng Su; Kuen-Yu Tsai; Yi-Chang Lu; YI-CHANG LU ; KUEN-YU TSAI | Advanced Lithography 2007 - Proc. SPIE | 6 | 0 | |
2013 | Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam-direct-write lithography | Chun-Hung Liu; Philip C. W. Ng; Yu-Tian Shen; Sheng-Wei Chien; Kuen-Yu Tsai; KUEN-YU TSAI | Journal of Vacuum Science & Technology B | 8 | 7 | |
2010 | Model-based proximity effect correction for electron-beam direct-write lithography | Chun-Hung Liu; Pei-Lin Tien; Philip C. W. Ng; Yu-Tian Shen; Kuen-Yu Tsai; KUEN-YU TSAI | Advanced Lithography 2010 -- Proc. SPIE 7637, Alternative Lithographic Technologies II | 7 | 0 | |
2012 | New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints | Hoi-Tou Ng; Yu-Tian Shen; Sheng-Yung Chen; Chun-Hung Liu; Philip C. W. Ng; Kuen-Yu Tsai; KUEN-YU TSAI | Journal of Micro/Nanolithography, MEMS, and MOEMS | 0 | 5 | |
2011 | Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects | Philip C. W. Ng; Kuen-Yu Tsai; Lawrence S. Melvin III; KUEN-YU TSAI | Journal of Micro/Nanolithography, MEMS, and MOEMS | 5 | 5 | |
2013 | Study of etching bias modeling and correction strategies for compensation of patterning process effects | Philip C. W. Ng; Kuen-Yu Tsai; Lawrence S. Melvin III; KUEN-YU TSAI | Microelectronic Engineering | 1 | 1 | |
2009 | Using transmission line theory to calculate equivalent refractive index of EUV mask multilayer structures for efficient scattering simulation by finite-difference time-domain method | Yen-Min Lee; Jia-Han Li; Philip C. W. Ng; Ting-Han Pei; Fu-Min Wang; Kuen-Yu Tsai; KUEN-YU TSAI ; JIA-HAN LI | Lithography Asia 2009, Proc. SPIE | 0 | 0 |