Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2002 | DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; Bude, J | 24th Annual Gallium Arsenide Integrated Circuit Symposium, 2002 | | | |
2004 | Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; MINGHWEI HONG ; Ng, KK; Bude, J | Applied Physics Letters | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; MINGHWEI HONG ; Ng, KK; others | Applied Physics Letters | | | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; MINGHWEI HONG ; others | Electron Device Letters, IEEE | | | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; others | Journal of electronic materials | | | |
2003 | GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition | Ye, PD; MINGHWEI HONG et al. | Device Research Conference, 2003 | | | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, K; Bude, J | 2002 International Conference on Molecular Beam Epitaxy | | | |
2003 | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, K; Bude, J | Journal of Crystal Growth | | | |