Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET
Journal
IEEE Transactions on Electron Devices
Journal Volume
60
Pages
3596-3600
Date Issued
2013
Author(s)
Abstract
We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET. Device and circuit designs to mitigate the amplified BTBT leakage of GeOI FinFETs are suggested. The effectiveness of various high threshold voltage technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed.
SDGs
Type
journal article