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College of Engineering / 工學院
Mechanical Engineering / 機械工程學系
The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages
Details
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
Journal
AIP Advances
Journal Volume
7
Journal Issue
5
Date Issued
2017
Author(s)
Liao, M.-H.
Hsieh, C.-P.
Lee, C.-C.
MING-HAN LIAO
DOI
10.1063/1.4983401
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/447950
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85019248090&doi=10.1063%2f1.4983401&partnerID=40&md5=9c4bbee3e6c46ea90f6680a06ff04505
Type
journal article