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College of Engineering / 工學院
Mechanical Engineering / 機械工程學系
Strain engineering of nanoscale Si MOS devices
Details
Strain engineering of nanoscale Si MOS devices
Journal
Thin Solid Films
Journal Volume
518
Journal Issue
6 SUPPL. 1
Date Issued
2010
Author(s)
Huang, J.
Chang, S.-T.
Hsieh, B.-F.
Liao, M.-H.
Wang, W.-C.
Lee, C.-C.
MING-HAN LIAO
DOI
10.1016/j.tsf.2009.10.098
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/447976
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-73649113143&doi=10.1016%2fj.tsf.2009.10.098&partnerID=40&md5=e97624279c945c821d91d4fcc9df5434
Type
journal article