An Optimized Gate Oxide Breakdown Test by Activating Oxide Traps at Low Fields
Journal
International Electron Device Meeting
Date Issued
1992-12
Author(s)
Abstract
In this paper, an optimized current ramp charge to breakdown test is evaluated. This methodology is more sensitive to oxide defects than the JEDEC recommended Jramp and the constant current Qbd tests due to its relatively slow current ramp at low fields (10MV/cm-13MV/cm). The time required for this test is consistently less than the constant current Jramp Qbd test. This method has been successfully utilized to identify the best Si surface preclean process in our experiment. The results were confirmed by surface roughness and metal impurity content analysis.>
Type
conference paper