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College of Management / 管理學院
Business Administration / 工商管理學系暨商學研究所
An Optimized Gate Oxide Breakdown Test by Activating Oxide Traps at Low Fields
Details
An Optimized Gate Oxide Breakdown Test by Activating Oxide Traps at Low Fields
Journal
International Electron Device Meeting
Date Issued
1992-12
Author(s)
RUEY-SHAN GUO
DOI
10.1109/iedm.1992.307328
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/299543
Type
conference paper
