Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors

Journal

Applied Physics Letters

Journal Volume

101

Journal Issue

21

Date Issued

2012

Author(s)

Huang, M.L.

Chang, Y.H.

Lin, T.D.

Lin, H.Y.

Liu, Y.T.

Pi, T.W.

Kwo, J.

DOI

10.1063/1.4767129

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443342

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870015446&doi=10.1063%2f1.4767129&partnerID=40&md5=b3d667d8673df6746d3abf1c1969cf0b

Type

journal article