Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
Journal
Applied Physics Letters
Journal Volume
101
Journal Issue
21
Date Issued
2012
Author(s)
Huang, M.L.
Chang, Y.H.
Lin, T.D.
Lin, H.Y.
Liu, Y.T.
Pi, T.W.
MINGHWEI HONG
Kwo, J.
Type
journal article